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[Fizinfo] BME Elméleti Fizika Tanszék szemináriuma

Chronological Thread 
  • From: tcsaba <tcsaba AT>
  • To: fizinfo AT
  • Subject: [Fizinfo] BME Elméleti Fizika Tanszék szemináriuma
  • Date: Wed, 14 Sep 2016 11:44:21 +0200

M E G H Í V Ó - I N V I T A T I O N

Seminar Series of the Department of Theoretical Physics at the
Budapest University of Technology and Economics

Miklós Csontos
(BUTE Department of Physics)

Asymmetry-induced resistive switching in Ag-Ag2S-Ag
memristors enabling a simplified atomic-scale memory design

Prevailing models of resistive switching arising from electrochemical formation of conducting filaments across solid state ionic conductors commonly attribute the observed polarity of the voltage-biased
switching to the sequence of the active and inert electrodes confining the resistive switching memory cell. Here we demonstrate stable switching behaviour in metallic Ag-Ag2S-Ag nanojunctions at room temperature exhibiting similar characteristics. Our experimental results and numerical simulations reveal that the polarity of the switchings is solely determined by the geometrical asymmetry of the electrode surfaces. By the lithographical design of a proof of principle device we demonstrate the merits of simplified fabrication of atomic-scale, robust planar Ag2S memory cells.

Időpont: 2016. szeptember 16. péntek, 10:15
Helyszín: BME Fizikai Intézet, Elméleti Fizika Tanszék,
Budafoki út 8. F-épület, III lépcsőház, szemináriumi szoba

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