ELFT HÍRADÓ

[tcsaba <tcsaba AT eik.bme.hu>]

                   M E G H Í V Ó - I N V I T A T I O N

    Seminar Series of the Department of Theoretical Physics at the
           Budapest University of Technology and Economics


                           Miklós Csontos
                    (BUTE Department of Physics)


        Asymmetry-induced resistive switching in Ag-Ag2S-Ag
    memristors enabling a simplified atomic-scale memory design


Prevailing models of resistive switching arising from electrochemical 
formation of conducting filaments across solid state ionic conductors 
commonly attribute the observed polarity of the voltage-biased
switching to the sequence of the active and inert electrodes confining 
the resistive switching memory cell. Here we demonstrate stable 
switching behaviour in metallic Ag-Ag2S-Ag nanojunctions at room 
temperature exhibiting similar characteristics. Our experimental results 
and numerical simulations reveal that the polarity of the switchings is 
solely determined by the geometrical asymmetry of the electrode 
surfaces. By the lithographical design of a proof of principle device we 
demonstrate the merits of simplified fabrication of atomic-scale, robust 
planar Ag2S memory cells.

Időpont: 2016. szeptember 16. péntek, 10:15
Helyszín: BME Fizikai Intézet, Elméleti Fizika Tanszék,
Budafoki út 8. F-épület, III lépcsőház, szemináriumi szoba