fizinfo AT lists.kfki.hu
Subject: ELFT HÍRADÓ
[Fizinfo] MFA Seminar - 2006-08-30 11:00 - Prof. T. Chikyow (Japan)
- From: HAJNAL Zoltán <hajnal AT mfa.kfki.hu>
- To: mfa AT mfa.kfki.hu
- Cc: naplo AT mfa.kfki.hu
- Subject: [Fizinfo] MFA Seminar - 2006-08-30 11:00 - Prof. T. Chikyow (Japan)
- Date: Wed, 23 Aug 2006 15:18:10 +0200
- List-archive: <http://sunserv.kfki.hu/pipermail/fizinfo>
- List-id: "ELFT HÍRADÓ" <fizinfo.lists.kfki.hu>
Az MFA következő szemináriumának előadója
Prof. Toyohiro Chikyow
Advanced Electronic Materials Center,
National Institute for Materials Science,
Insitute of Solid State Physics,
University of Tokyo,
Kashiwa Chiba, Japan
Combinatorial synthesis and characterization for
innovative materials science and materials informatics
Helyszín és az időpont a szokásos:
MTA MFA Tanácsterem (KFKI Campus, 26. ép. I. em.)
2006. augusztus 30. 11:00
Az előadás kivonata alább olvasható. Minden érdeklődőt szívesen látunk!
In the future large scale integrated circuit (LSI), due to the scaling
down of the transistors size, atomically controlled nano scale materials
are required. For examples, gate oxide material becomes one of the most
serious problem and a lot of efforts have been made to find best
candidate of having higher dielectric property but amorphous structure.
For this purpose, HfO2 or ZrO2 based oxides has been proposed and the
property has been investigated. However the final material was not
determined yet. To optimize composition of the oxide, newly designed
combinatorial growth system was applied to find the candidate in a
ternary or binary oxide. Dielectric properties are characterized by
scanning microwave microscope as well as conventional C-V measurement.
Structures are investigated by combinatorial x-ray measurement system
and transmission electron microscopy combine with micro sampling
technique. Throughout the experiments, a new candidate for the gate
insulator was proposed.
For the metal gate/high-k research, Pt-W composition spread film 5 nm
thick was prepared on HfO2/Si(100) substrate by combinatorial synthesis
system, which has moving mask system and ion sputtering gun. The Work
function was measured by XPS and electrical properties were
characterized by I-V and C-V measurements. The interface structures were
investigated by transmission electron microscopy.
Throughout these experiments, it was proved that nano scale surface and
interface understanding is critical for the future nano electronics and
the combinatorial thin film synthesis system was quite effective for
materials exploration and characterization. Also the materials
informatics where the materials science and information technology is
unified to make an innovation in materials science is on the process of
trial. The Materials informatics enable us to link different research
field materials data and gives us a hint to make innovations.
In my talk, at first, materials science in micro electronics is reviewed
and some new insights are shown. Then a possibility of materials
informatics will be discussed.
- [Fizinfo] MFA Seminar - 2006-08-30 11:00 - Prof. T. Chikyow (Japan), HAJNAL Zoltán, 08/23/2006
Archive powered by MHonArc 2.6.19+.