ELFT HÍRADÓ

[tcsaba <tcsaba AT eik.bme.hu>]

                 M E G H Í V Ó - I N V I T A T I O N

    Seminar Series of the Department of Theoretical Physics at the
           Budapest University of Technology and Economics


                   M. Fernando Gonzalez-Zalba
                 (Hitachi Cambridge Laboratory)

            Quantum computing with quantum transistors


The silicon metal-oxide-semiconductor transistor is the workhorse of the 
microelectronics industry. It is the building block of all major 
electronic information processing components such as microprocessors, 
memory chips and telecommunications microcircuits. By shrinking its size 
generation after generation the computational performance, memory 
capacity and information processing speed has increased relentlessly. 
However, the process of miniaturization is bound to reach its 
fundamental physical limits in the next decades.

New computing paradigms are hence paramount to overcome the technical 
limitations of silicon technology and continue increasing the 
computation performance beyond simple multi-core approaches. Quantum 
computing –based on computing with interacting two-level quantum systems 
or qubits-offers exponential speed-up over several classical algorithms 
[1-3] and it is hence one of the most sought-after alternatives to 
conventional computing. However, finding the optimal physical system to 
process quantum information and scale it up to the large number of 
qubits necessary to run the aforementioned algorithms remains a major 
challenge. Paradoxically, we are now starting to see that silicon 
technology itself could offer an optimal platform on which to fabricate 
spin-based scalable quantum circuits: Quantum computing with silicon 
transistors fully profits from the most established industrial 
technology to fabricate large scale integrated circuits while 
facilitating the integration with conventional electronics for fast data 
processing of the binary outputs of the quantum processor; all this 
offering long electron spin coherence times [4].

In this talk, I will present a series of results on fully depleted 
silicon-on- insulator (FD-SOI) transistors at miliKelvin temperatures 
that show this technology could provide a platform on to which implement 
electron-spin qubits [5-10]. Additionally, I will present a set of 
experiments that demonstrate the potential to scale FD-SOI technology to 
a large number of qubits and interface them naturally with conventional 
digital electronics [11-12].

References

[1] P. W. Shor, SIAM Journal on Computing 26 (1997) 1484.
[2] L. K. Grover, Phys. Rev. Lett 79 (1997) 325.
[3] D. Poulin, Quantum Inf. & Comput. 15 (2015) 361.
[4] M. Veldhorst, Nature, 526 (2015), 410.
[5] A. C. Betz, M. F. Gonzalez-Zalba, Nano Lett. 15 (2015) 4622.
[6] M. F. Gonzalez-Zalba, Nat. Commun. 6 (2015) 6084.
[7] M. Urdampilleta, M. F. Gonzalez-Zalba, Phys. Rev. X 5 (2015) 031024.
[8] M. F. Gonzalez-Zalba Nano Lett. 16 1614 (2016).
[9] R. Mizuta, M. F. Gonzalez-Zalba, Phys. Rev. B 95 (2017) 045414.
[10] A. Chatterjee, M.F. Gonzalez-Zalba, Phys. Rev. B 97 045405 (2018)
[11] A. C. Betz, M. F. Gonzalez-Zalba, App. Phys. Lett. 108 (2016) 
203108.
[12] S. Schaal, M. F. Gonzalez-Zalba, Phys. Rev. App. 9 054016 (2018), 
arXiv:1809.03894.


Időpont: 2018. október 19. péntek, 10:15
Helyszín: BME Fizikai Intézet, Elméleti Fizika Tanszék,
Budafoki út 8. F-épület, III lépcsőház, szemináriumi szoba