ELFT HÍRADÓ

[tcsaba <tcsaba AT eik.bme.hu>]

                 M E G H Í V Ó - I N V I T A T I O N

    Seminar Series of the Department of Theoretical Physics at the
           Budapest University of Technology and Economics


                          Barna Imre Ferenc
             (Wigner Research Center for Physics)


     Electron scattering and conduction in doped semiconductors in
            simultaneous strong infrared radiation field

Electron scattering and conduction on various types of impurities in 
semiconductor can be calculated via the first order Born approximation 
when the electrons are considered as free particles described by plane 
waves. In the following we present analytic angular differential cross 
section formula for electromagnetic radiation field assisted electron 
scattering on impurities approximated with various model potentials in 
semiconductors. The main idea describes the scattering electrons with 
the well-known Volkov wave function which automatically incorporates 
electron dynamics induced by the external oscillating filed. This 
description is well-known for strong laser fields from half a century. 
The calculated electron conductance in the semiconductor could be 
enhanced with an order of magnitude if an infrared electromagnetic field 
is present with I = 1014 W/cm2 intensity, which for instance will be 
achievable in the ELI-ALPS facility in the near future.

Időpont: 2018. május 4. péntek, 10:15
Helyszín: BME Fizikai Intézet, Elméleti Fizika Tanszék,
Budafoki út 8. F-épület, III lépcsőház, szemináriumi szoba