ELFT HÍRADÓ

[Horváth Zsolt Endre <horvath.zsolt.endre AT ek.hun-ren.hu>]

Kedves Kollégák!


** Figyelem, a szokásostól eltérő időpont! **


2026 szeptember 11-én, pénteken 11 órakor kerül sor az EK MFA 26. 
épület, 1 emeleti tanácstermében


Prof. John F. Conley, Jr.
School of Electrical Engineering and Computer Science,
Oregon State University, Corvallis, OR, USA



"Microwave Enhanced Atomic Layer Processing"


c. előadására.

Összefoglaló:
Atomic layer processing (ALP), based on cyclic purge-separated 
self-limiting reactions, enables formation of highly uniform and 
conformal films with atomic scale thickness control. The low deposition 
temperatures typical of ALP, however, can allow for incorporation of 
residual impurities which in turn can lead to non-ideal stoichiometry 
and sub-optimal film properties. Although elevated temperature 
post-deposition annealing (PDA) can improve film quality, PDA often 
cannot completely purify the full thickness of a film and the 
temperatures required can exceed the maximum thermal budget of the 
substrate or previously formed electronics. To maintain low thermal 
budget while maximizing film properties, adding annealing or other 
energy treatments during each (or every few) ALP cycle(s) has been shown 
to help drive / speed reactions and reduce impurity / ligand 
incorporation. Collectively referred to as energy enhanced (EE) ALD, 
these techniques are distinct from plasma ALD. Treatments include 
in-situ rapid thermal annealing (MTA, DADA), flash lamps, plasma 
exposure, and UV [1,2]. These in-situ treatments can remove impurities 
and defects from the surface of the growing film before they become 
buried, resulting in a more complete densification or purification than 
PDA. Demonstrated benefits of EE-ALD include improved physical, optical, 
and electrical properties as well as reduced residual impurities, all at 
a lower temperature than PDA, and often not achievable by PDA. However, 
drawbacks of EE-ALD can include added process time, plasma, and/or UV 
damage. To try and avoid these drawbacks, we introduce microwave 
enhanced (MW) ALP [3]. Exsitu post MW annealing was originally shown to 
improve dopant activation at reduced temperature while minimizing 
diffusion, and more recently to improve properties of fully formed ALD 
films and devices [4]. Here, I describe the development of a MW-ALD 
system and INVITED TALK 28 compare MW-ALD of various films with MW-PDA. 
In-situ MW enhancement may offer the promise of more closely approaching 
ideal ALD film formation. [1] Conley, Jr. et al., Appl. Phys. Lett. 84, 
1913 (2004). [2] Conley, Jr. et al., MRS Proc. Vol. 811, 5 (2004). [3] 
Kupp, et al. J. Vac. Sci. Tech. A. 43(5), 052403 (2025). [4] Yue et al. 
IEEE EDL 38,1390 (2017)


Minden érdeklődőt szívesen látunk!


Horváth Zsolt Endre
Szeminárium koordinátor


Dr. Zsolt E. HORVÁTH
Institute for Technical Physics and Materials Science,
Centre for Energy Research
(EK MFA)
Konkoly Thege Rd. 29-33, 1121 Budapest,
Mail: P.O.Box 49, H-1525 Budapest, Hungary
Phone: +36-1-392-2680, Fax: +36-1-392-2226
e-mail:horvath.zsolt.endre AT ek.hun-ren.hu