ELFT HÍRADÓ

[Kormányos Andor <andor.kormanyos AT ttk.elte.hu>]

ELTE TTK Fizikai Intézet / ELTE Institute of Physics


ORTVAY KOLLOKVIUM / ORTVAY COLLOQUIUM
(https://physics.elte.hu/ortvayseminar)



Thursday, 3rd April  2025, 15:00h.

Pócza Jenő Lecture Hall, Physics Building 1.71

Pázmány Péter sétány 1/A, 1117 Budapest


Vladimir Dyakonov

University of Würtzburg (Germany)

Spin Defects in hexagonal Boron Nitride for Sensing Applications
2D materials have emerged over the last decade as the new playground for 
quantum photonics devices. Among them, hexagonal boron nitride (hBN) is an 
interesting candidate, mainly because of its crystallographic compatibility 
with different 2D materials, but also because of its ability to harbour 
optically active defects that generate single photons. The negatively charged 
boron vacancy was the first intrinsic optically addressable spin defect in 
hBN reported in 2020, allowing coherent control at room temperature. Although 
other types of spin centres have been found in this material since then, this 
spin-1 colour centre remains the only one with a clearly elucidated 
structure. Practical applications of hBN spin centres as intrinsic magnetic 
field, temperature, pressure, etc. sensors in van der Waals heterostructures 
are hence envisioned. To further boost the quantum sensing applications of 
this spin defect in hBN, we are currently investigating the dynamics of the 
intermediate state, also known as the metastable state, because it is likely 
to trap electrons for a certain time, which affects the subsequent sensing 
protocol when the pulsed magnetic resonance experiment is designed.


Andor Kormányos

coordinator