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- From: Szeminárium koordinátor <szfi-seminar AT wigner.mta.hu>
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- Subject: [Fizinfo] WIGNER SZFI Seminar, 05 Mar - Barna Imre
- Date: Thu, 28 Feb 2019 06:26:02 +0100 (CET)
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WIGNER SZFI Seminar
The influence of a strong infrared radiation field on the conductance properties of doped semiconductors
Barna Imre
Wigner RCP SZFI
Tuesday, 5 March 2019 10:00, KFKI Campus, Bldg. 1, 2nd floor, Conference Room
This work presents an analytic angular differential cross section formula for the electromagnetic radiation field-assisted electron scattering on impurities in semiconductors. These impurities are approximated with various model potentials. The scattered electrons are described with the well-known Volkov wave function, which has been used to describe strong laser field matter interaction for more than half a century, which exactly describes the interaction of the electron with the external oscillating field. These calculations show that the electron conductance in a semiconductor could be enhanced by an order of magnitude if an infrared electromagnetic field is present with 10^11 W/cm^2 < I <10^13 W/cm2^ intensity.
Reference:
Imre Ferenc Barna, Mihály András Pocsai, and Sándor Varró, Eur. Phys. J. Appl. Phys. 84, 20101 (2018)
Everyone is welcome to attend.
János Asbóth
szfi-seminar AT wigner.mta.hu
- [Fizinfo] WIGNER SZFI Seminar, 05 Mar - Barna Imre, Szeminárium koordinátor, 02/28/2019
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