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[Fizinfo] Meghívó Prof. Jaroslav Fabian előadására

Chronological Thread 
  • From: SIMON Ferenc <f.simon AT>
  • To: fizinfo AT
  • Subject: [Fizinfo] Meghívó Prof. Jaroslav Fabian előadására
  • Date: Wed, 27 May 2015 15:43:19 +0200 (CEST)


A BME Fizika Tanszék szemináriumára:

Prof. Jaroslav Fabian
University of Regensburg

Spin phenomena in two dimensional materials

Időpont: 2015. június 1 (hétfő) 10.00
Hely: BME, F. epulet, I. lépcsőhaz, 1. emelet, Schay terem
megközelítes: AT 47.479918,19.0547192,19z

Rövid bemutatás:
Jaroslav Fabian a spintronikai kutatások egyik meghatározó alakja. Összefoglaló munkáját a területen (Rev. Mod. Phys. 76, 323) több mint 4.500-an hivatkozták. Jelenlegi munkái a grafén - mint ígéretes spintronikai alapanyag - spin-relaxációs problémáira irányulnak.

Minden érdeklődőt szeretettel várunk!
Simon Ferenc

Two dimensional materials, such as graphene, transition metal dichalcogenides, or black phosphorous, offer immense opportunities for electronics and spintronics [1]. Being ultimately thin these materials could make the thinnest diodes and transistors, or the thinnest magnetic sensors and read heads. Being essentially a surface, they are also susceptible to adatoms and admolecules which can induce local magnetic moments and giant spin-orbit coupling [2]. This is in fact a great opportunity, allowing us to decorate (functionalize) graphene and like materials with specific defects to make desired properties. I will review the essential spin physics of novel two dimensional materials, including spin-orbit coupling and magnetic moments, and discuss the ramifications of the (intended and non-intended) functionalization for spin transport experiments. Most of the results are obtained by performing first principles calculations on large atomic supercells, necessary to study the physics in the dilute defect limit. These calculations show a nice agreement with experiments regarding spin relaxation in single [3] and bilayer [4] graphene, but also make authoritative predictions for future realistic charge and spin based device---an example is given by optospintronics in graphene/TMC structures.
[1] W. Han, R. Kawakami, M. Gmitra, and J. Fabian, Nature Nanotechnology 9, 794 (2014).
[2] M. Gmitra, D. Kochan, and J. Fabian, Phys. Rev. Lett. 110, 246602 (2013).
[3] D. Kochan, M. Gmitra, and J. Fabian, Phys. Rev. Lett. 112, 116602 (2014).
[4] D. Kochan, S. Irmer, M. Gmitra, and J. Fabian, arXiv:1504.03898

Prof. Ferenc SIMON (PhD, DSc)
professor @ TU-Budapest
privatdozent @ Uni Wien
skype: ferisimon
Dept. of Physics Budapest Univ. of Techn. and Econ.
H 1521 Budapest POBox 91 HUNGARY
ph. lab.: (36-1) 463-1215
ph. secr.(hung. only) (36-1) 463-1438
fax: (36-1) 463-4180
mob.: 36-30-452-4705

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