ELFT HÍRADÓ

[HAJNAL Zoltán <hajnal AT mfa.kfki.hu>]

Dear Colleagues,

        the next MFA Seminar is out of the normal schedule:

        FRIDAY, 2007-10-19 11:00

the location is - as usual:

        MFA Meeting Room (KFKI Campus, Bldg. 26, 1st floor)

The speaker is
        
        Patrick G. Soukiassian
                Director - "SIMA" Laboratory
                Commissariat á l’Energie Atomique,
                Saclay and Université Paris-Sud,
                Orsay, France
        http://www.sima.u-psud.fr/
        
His is going to talk about:     

        *Amazing Nanochemistry at SiC Surfaces and Interfaces*

The abstract is attached below.

We welcome everyone interested!

Regards,
                        Z. Hajnal


            =*=*=*=*=*=*=*=*=*=*=*=*=*=*=*=*=

ABSTRACT
--------

Silicon carbide (SiC) is a wide band gap IV-IV compound semiconductor
having strong interest in advanced device/sensor applications, and in
nanotechnology.

Cubic/hexagonal SiC surfaces and interfaces are investigated by
atom-resolved scanning tunneling microscopy/spectroscopy, core
level/valence band photoemission spectroscopies using synchrotron
radiation and infrared absorption spectroscopy. Such important issues as
i) self-formation of atomic lines having unprecedented characteristics,
ii) diamond-type transformation of C-terminated surface, insulator/SiC
interface formation, atomic scale surface passivation and/or
metallization by O2/H2 will be discussed.

In particular, the first observation of a semiconductor surface
metallization induced by atomic hydrogen will be presented. Such a
finding directly impacts the ability to eliminate electronic defects at
semiconductor interfaces critical for microelectronics, provides means
to develop electrical contacts on high band-gap chemically passive
materials, particularly exciting for interfacing with biological
systems, and gives control of surfaces for lubrication, e.g. for
nanomechanical devices.


            =*=*=*=*=*=*=*=*=*=*=*=*=*=*=*=*=