ELFT HÍRADÓ

[Gubicza Jeno <gubicza AT ludens.elte.hu>]

                                        MEGHIVO

                        az ELTE TTK Altalanos Fizika Tanszek
                                    szeminariumara

                          Cristian Pantea (TCU, Texas, USA)

        Diamond - Silicon Reaction under High-Pressure High-Temperature 
Conditions
        
Abstract

Interaction between diamond crystals and liquid silicon at pressures of 2
and 9 GPa and various temperatures was studied by Raman spectroscopy, x-ray
single crystal diffractometry, and scanning electron microscopy. The
mechanism of growth of silicon carbide (SiC) film on diamond crystals
depended on the magnitude of applied pressure. At low pressures, in the
graphite stable region, only disoriented, fine grain beta-SiC crystals were
formed inside silicon surrounding diamond crystals. In this case the SiC
formation is affected by the phase transition of diamond to graphite, two
competing processes take place: direct reaction of Si with diamond, and
reaction of Si with graphite. At higher pressures corresponding to the
diamond stable region, oriented growth of beta-SiC film on both (111) and
(100) faces of diamond crystals was observed, even at high growth rates. 
                        

        Helye: ELTE TTK Eszaki Tomb, Altalanos Fizika Tanszek
                1117 Budapest, Pazmany Peter setany 1/A, 4.emelet 4.52.terem

        Ideje: 2002. marcius 12. kedd, 8.30.

        Minden erdeklodot szivesen latunk.

        A 2001/2002. tanev II. felevi programja megtalalhato a kovetkezo 
cimen:
        http://metal.elte.hu
        
                                                
                                                        Gubicza Jeno